First-principles study on crystal structures and bulk modulus of CuInX<sub>2</sub> (X = S, Se, S-Se) solar cell absorber

نویسندگان

چکیده

Abstract Chalcopyrite semiconductors are widely used as absorbers in thin film solar cells, especially flexible due to their high power conversion efficiency. They also have interesting mechanical properties, making them promising materials for flexible, light, and cells. In this work, we report the first-principle calculations of lattice constant bulk modulus CuInS 2 , CuInSe CuIn(S,Se) absorber materials. All performed using plane wave implemented Quantum ESPRESSO software package framework density functional theory PBE-GGA approximations ultrasoft pseudopotentials. The calculated correlates well with available experimental study. energy-volume pressure-volume relations described third order Birch-Murnaghan’s equation state calculate material, which is associated hardness a material under particular conditions. values obtained good agreement theoretical results, except been reported first time.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Ab-initio study of Electronic, Optical, Dynamic and Thermoelectric properties of CuSbX2 (X=S,Se) compounds

Abstract: In this work we investigate the electronic, optical, dynamic and thermoelectric properties of ternary copper-based Chalcogenides CuSbX2 (X= S, Se) compounds. Calculations are based on density functional theory and the semi-classical Boltzmann theory. Computations have been carried out by using Quantum-Espresso (PWSCF) package and ab-initio pseudo-potential technique. To estimate the e...

متن کامل

Real-time observation of Cu2ZnSn(S,Se)4 solar cell absorber layer formation from nanoparticle precursors.

The selenization of Cu-Zn-Sn-S nanocrystals is a promising route for the fabrication of low-cost thin film solar cells. However, the reaction pathway of this process is not completely understood. Here, the evolution of phase formation, grain size, and elemental distributions is investigated during the selenization of Cu-Zn-Sn-S nanoparticle precursor thin films by synchrotron-based in situ ener...

متن کامل

بررسی ویژگی‌های ساختاری و الکترونی ترکیب‌های AgGaX2(X=Se,S,Te) و CuSbX2(X=Se,S,Te) با استفاده از نظریۀ تابعی چگالی

در این مطالعه ویژگی­ های ساختاری از جمله ثابت­ های شبکه، مدول حجمی و الکترونی ترکیب ­های (X=S,Se,Te) AgGaX2 وCuSbX2 (X=S,Se,Te) در حالت انبوه در چارچوب نظریۀ تابعی چگالی و روش موج­ های  تخت بهبود یافتۀ خطی با پتانسیل کامل (FP-LAPW) با استفاده از نرم ­افزار Wien2k محاسبه شده است. هم­چنین برای بررسی ویژگی­های الکترونی این ترکیب­ ها، چگالی حالت­ های کل، ساختار نواری، چگال...

متن کامل

Strong interplay between structure and electronic properties in CuIn(S,Se){2}: a first-principles study.

We present a first-principles study of the electronic properties of CuIn(S,Se){2} (CIS) using state-of-the-art self-consistent GW and hybrid functionals. The calculated band gap depends strongly on the anion displacement u, an internal structural parameter that measures lattice distortion. This contrasts with the observed stability of the band gap of CIS solar panels under operating conditions,...

متن کامل

Mercury bismuth chalcohalides, Hg3Q2Bi2Cl8 (Q = S, Se, Te): syntheses, crystal structures, band structures, and optical properties.

Three quaternary mercury bismuth chalcohalides, Hg3Q2Bi2Cl8 (Q = S, Se, Te), are reported along with their syntheses, crystal structures, electronic band structures, and optical properties. The compounds are structurally similar with a layer comprised of a hole perforated sheet network of [Hg3Q2](2+) (Q = S and Te) that forms by fused cyclohexane, chairlike Hg6Q6 rings. The cationic charge in t...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Journal of physics

سال: 2023

ISSN: ['0022-3700', '1747-3721', '0368-3508', '1747-3713']

DOI: https://doi.org/10.1088/1742-6596/2432/1/012009